Process for plasma deposition

ABSTRACT

A process for plasma deposition is disclosed, which permits increasing the plasma deposition processing capacity. 
     In a single substrate processing plasma CVD apparatus, chamber plasma cleaning II is done once for every plural deposition cycles I. If necessary, for each deposition cycle the intensity of the electric field applied between pair electrodes is varied (for instance, increased to an extent corresponding to the deposition capacity reduction).

BACKGROUND OF THE INVENTION

This invention relates to a process for plasma deposition and a plasmaCVD apparatus, specifically a single substrate processing plasma CVDapparatus. The invention is applicable to, for instance, a plasma CVDprocess or the like for film formation to form an electronic materialfor a semiconductor device or the like.

In the prior art single substrate processing plasma CVD apparatus,chamber plasma cleaning is done once right after each deposition cycle.This is shown in FIG. 2. As shown, cleaning IIa is done right after adeposition cycle Ia, and cealing IIb is done again right after the nextdeposition cycle Ib.

This is done so because during the deposition CVD films are formed onthe electrodes as well. If a deposition cycle is done right after thepreceding cycle, i.e., without cleaning the chamber after the precedingcycle, the intensity of the electric field between applied betweenelectrodes is reduced compared to the value in the preceding cycle, thusleading to non-unifrmity of the thickness of the CVD film and quality(etching rate, stress, etc.) thereof. For this reason, right after adeposition cycle the chamber is plasma cleaned once to remove CVD filmsformed on the electrodes. In the prior art, however, the time that isrequired for the cleaning sequence increases the total processing timeand thus reduces the processing capacity of the apparatus.

It may be thought that if there is an adequate power meter which canreliably monitor the effective inter-electrode power, continuousdeposition may be possible even in the prior art because it is possibleto provide an adequate high frequency output at an adequate timing andthus make the electric field between the electrodes constant. Actually,however, the impedance including the electrodes, particularly plasmaimpedance, subsequent to an impedance matching unit in high frequencycircuit, is varied complicatedly due to such causes as gas pressure,contamination of the chamber, CVD film deposition on the electrodes,etc. For this reason, up to date there is no power meter which canmonitor the effective power accurately and instantly. Therefore, in theprior art method it is difficult to control the inter-electrodeeffective power, thus making the cleaning for each deposition cyclenecessary.

SUMMARY OF THE INVENTION

An object of the invention which has been intended in view of the aboveproblems in the prior art method, is to provide a method of plasmadeposition, which permits increasing the plasma deposition capacity.

To attain the above object of the invention, there is provided a processfor plasma deposition, which uses a single substrate processing plasmaCVD apparatus having a chamber accommodating an upper electrode and alower electrode facing the upper electrode and supporting a substrateand comprises the steps of performing at least two deposition cycles toform a CVD film on each substrate, the intensity of the electric fieldapplied between the electrodes being changed for each deposition cycle,and plasma cleaning the chamber after the deposition cycles.

In the process, the intensity of the electric field is increasedaccording to the thickness of film deposited on the upper electrode.

Further, in the process the distance between the upper and lowerelectrodes is reduced according to the thickness of film deposited onthe upper electrode.

According to the invention, there is further provided a single substrateprocessing plasma CVD apparatus, which comprises a chamber, a pair ofelectrodes disposed in the chamber, one of the electrodes supporting asubstrate, means for generating an electric field between the pair ofelectrodes, and means for correcting the itensity of the electric fieldfor each depositon cycle.

In the apparatus, the electric field correcting means is for varying thedistance between the two electrodes.

According to the invention, a single substrate processing plasma CVDprocess is carried out such that chamber plasma cleaning is done oncefor a plurality of deposition cycles.

In this process, the electric field between the two electrodes may bevaried, i.e., increased to an extent corresponding to depositioncapacity reduction.

In case of films which can be formed without being influenced by theelectric field density for instance a SiO₂ type film with a thickness ofabout 3,000 angstroms, it is possible by varying the electric fieldintensity to permit cleaning to be done only once for a plurality ofdeposition cyclces. In case when the film formation is related to theelectric field density, the electric field may be varied in a settingsuch that the the film quality is not changed.

Since according to the invention the chamber plasma cleaning can be doneonly once for a plurality of deposition cyclces, it is possible toreduce the cleaning frequency in the prior art process sequence, inwhich chamber plasma cleaning is done once right after each depositioncycle. It is thus possible to greatly improve the processing capacity ofthe single substrate processing plasma CVD apparatus.

Further, since according to the invention the intensity of the electricfield between the electrodes is varied for each deposition cycle, it ispossible to readily and adequately make up for the inter-electrodeelectric field intensity reduction due to film deposition on theelectrodes during the deposition. Thus, the next deposition cycle can becontinuously carried out without resulting in non-uniformity of thethickness and quality of ther film, such as etching rate, stress, etc.It is thus possible to more effectively realize the invention as claimedin claim 1.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing a process sequence of a single substrateprocessing plasma CVD apparatus according to the invention;

FIG. 2 is a view showing a process sequence of a single substrateprocessing plasma CVD apparatus in the prior art;

FIG. 3 is a view showing the concept underlying the single substrateprocessing plasma CVD apparatus according to the invention;

FIG. 4 is a view showing the relation between refractive index andnumber of deposition cycles in an embodiment of the invention;

FIG. 5 is a view showing the relation between growth rate and number ofdeposition cycles in the embodiment;

FIG. 6 is a view showing the relation between film stress and number ofdeposition cycles in the embodiment;

FIG. 7 is a view showing the relation between refractive index andnumber of deposition cycles in a prior art example;

FIG. 8 is a view showing the relation between growth rate and number ofdeposition cycles in the prior art example;

FIG. 9 is a view showing the relation between film stress and number ofdeposition cycles in the prior art example; and

FIG. 10 is a view illustrating a problem in the prior art exmple.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now, embodiments of the invention will be described with reference tothe drawings. It is of course to be understood that the embodiments areby no means limitative of the invention.

EMBODIMENT 1

In this embodiment, the invention is applied to a single substrateprocessing plasma CVD process.

As shown in the process sequence shown in FIG. 1, in this embodimentcleaning II is done once for a plurality of deposition cycles I. Withthis process sequence, the processing capacity could be greatlyimproved.

FIG. 3 is a schematic view showing an electrode section of a parallelflat electrode type single substrate processing plasma CVD apparatusused in this embodiment. The parallel flat electrodes are an upper and alower electrode 1 and 2. A substrate or wafer 3 for CVD film formationthereon is placed on the lower electrode 2. FIG. 3 shows a state rightbefore the commencement of deposition on the wafer 3. In the state ofFIG. 3, the intensity E_(x) of the electric field produced in the spacebetween the parallel flat electrodes is given as

    E.sub.x =E.sub.0 -(E.sub.2 +E.sub.3)

where E₀ is the electric field intensity in the case of absence of thewafer 3 and CVD film 4, and E₃ and E₄ are the electric field intensitiesin the wafer 3 and the CVD film 4, respectiely. In the state shown inFIG. 3, the electric field intensity produced in the space between theparallel flat electrodes is reduced by E₃ by the CVD film deposited onthe upper electrode 1. E₃ is a function of the thickness d3 of the CVDfilm 4. Specifically, with increase of the thickness d3 the intensity E₃is increased to reduce the intensity of the electric field produced inthe space between the parallel flat electrodes. FIGS. 7 to 9 showrefractive index, growth rate and film stress data when plasma filmdeposition is done continuously without electric field correction withthe single substrate type plasma CVD apparatus. The data show well themanner of increase of the electric field produced in the space betweenthe parallel flat electrodes as the CVD film 4 is deposited on the upperelectrode 1.

In this embodiment, as means for electric field correction for eachdeposition cycle the peripheral voltage applied between the parallelflat electrodes is increased according to the thickness d3 of the CVDfilm 4 deposited on the upper electrode 1. It is thus possible toreadily and properly make up for the inter-electrode electric fieldintensity reduction due to deposited films formed on the electrodesduring the deposition. Thus, the next deposition cycle can be performedcontinuously without possibility of resulting in non-uniformity of thefilm thickness and film quality, such as etching rate, film stress, etc.

With this embodiment, when plasma nitride film deposition is madecontinuously, the number of deposition cycles, refractive index, growthrate and film stress are substantially in a flat relationship to oneanother, indicating no change in the deposition status.

In the prior art, as shown in FIG. 10, when plasma nitride filmdeposition is made continuously, at a certain film thickness the highfrequency etching rate which is an index of the film quality, is reducedwith reduction of the inter-electrode radio frequency power as shown inthe graph.

In this embodiment, the inter-electrode electric field intensityreduction due to the CVD films formed on the electrodes can be made upfor, and thus it is possible to satisfactorily obtain the deposition ofthe next continuous cycle without resulting in non-uniformity of thethickness and quality of the CVD film. Thus, it is possible to realizethe cleaning frequency reduction in the process sequence without anyproblem.

EMBODIMENT 2

In this embodiment, as means for electric field intensity correction foreach deposition cycle the distance d1 between the parallel flatelectrodes is reduced according to the thickness d3 of the CVD film 4deposited on the upper electrode 1. Again with this embodiment it ispossible to obtain the same functions and effects as in the previousEmbodiment 1.

As has been described in the foregoing, according to the invention it ispossible to provide a process of plasma deposition which permitsincreasing the plasma deposition processing capacity.

What is claimed is:
 1. A process for plasma deposition using a singlesubstrate processing plasma CVD apparatus having a chamber accommodatingan upper electrode and a lower electrode facing the upper electrode andsupporting a substrate, said process comprising the steps of:performingat least two deposition cycles to form a CVD film on said substrate, theintensity of the electric field applied between the upper and lowerelectrodes being changed for each deposition cycle; and plasma cleaningthe chamber after the deposition cycles.
 2. The process for plasmadeposition according to claim 1, wherein the intensity of the electricfield is increased according to the thickness of film deposited on theupper electrode.
 3. The process for plasma deposition according to claim1, wherein the distance between the upper and lower electrodes isreduced according to the thickness of film deposited on the upperelectrode.